The Effect of SiC-MOSFET Characteristics on the Performance of Dielectric Barrier Discharge Plasma Actuators with Two-Stroke Charge Cycle Operation

The low-voltage operation of a dielectric-barrier-discharge (DBD) plasma actuator with simple electric circuit has the potential to put it into industrial applications. However, there is an issue that efficiency operated DBD lower than high-voltage one. In this study, characteristics silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs), which are used in circuit, investigated focus on on-state resistance. resistance SiC-MOSFET affects rise time applied voltage our experimental condition. energy consumption by applying pulse increases increasing Flow visualization particle image velocimetry measurement reveals whose lowest induces highest velocity ionic wind. Also, low preferable terms thrust-to-power ratio. These findings contribute development optimal power supply for actuators